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Field of the Invention The present invention relates to a semiconductor laser apparatus and an optical disk drive and, more particularly, to a semiconductor laser apparatus for generating a beam which is radiated from a semiconductor laser and has a converging mode distribution in which a diverging beam is converged into a beam spot having a desired diameter on an optical disk and an optical disk drive and an optical disk drive including the semiconductor laser apparatus. 2. Description of the Related Art Recent rapid development of recording media for recording information, such as optical disks, magnetic disks, magneto-optical disks, and the like, has accelerated demands on high-density recording technology for these media. In order to meet these demands, an optical disk drive is required to converge a beam spot on a recording track of an optical disk having a size of about not more than 1.mu.m. In order to converge a beam spot in the diameter of not more than 1.mu.m on a track of an optical disk, a semiconductor laser apparatus is required to generate a beam which has a converging mode distribution in which a diverging beam is converged into a beam spot having a diameter of about 100.mu.m or less. As shown in FIGS. 1 and 2, a semiconductor laser apparatus according to the prior art generates a beam by using an apparatus for generating a beam in a diverging mode distribution having a diameter of about 100.mu.m. FIG. 1 is a plan view, and FIG. 2 is a side view. A semiconductor laser apparatus 1 according to the prior art includes an n-type GaAs substrate 5, a two-layer electrode 6 disposed on the n-type GaAs substrate 5, and an active layer 7 disposed on the two-layer electrode 6. A reflector 4 disposed on the n-type GaAs substrate 5 has a reflecting face 8 on which a mesa portion 9 is formed. A p-type AlGaAs layer 11 is formed over the reflecting face 8 and the mesa portion 9 and, moreover, an n-type GaAs layer 12 is formed on the p-type AlGaAs layer 11. A cathode electrode 13 is disposed on the n-type GaAs layer 12. The n-type GaAs substrate 5 is ordinarily used as the substrate. There is known a semiconductor laser apparatus including a substrate having a higher band gap and a lower resistance. 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